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100 W GaN Transistor from Ampleon

GaN Transistor: CLF3H0035-100U
February 2, 2022
RFMW
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The CLF3H0035-100U is a 100 W, unmatched, broadband, GaN-SiC HEMT transistor usable for both CW and pulsed, general purpose applications in frequency ranges from DC to 3.5 GHz.


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DOCUMENTS AND FILES

High Power PIN Diodes

January 17, 2012
Skyworks’ SMP1324-087LF, SMP1371-087LF and SMP1302-085LF PIN diodes are designed for use in high-power-handling switches from 1–900 MHz. SMP1324-087LF and SMP1371-087LF are optimized for use as series diodes. SMP1302-085LF is optimized for use as a shunt diode.

Sustainability Report 2010

January 17, 2012
The data and information in this report reflects our commitment to ensuring that our business practices and operations do not come at the expense of future generations.

SPDT switch MMIC enables high-performance Ka-band Tx/Rx module

January 17, 2012
Ka-band Tx/Rx module - customizing an advanced MMIC solution can enable higher-level system performance beyond what is possible using standard microwave or millimeter-wave devices.

Epsilon and MLMS Enable Higher Levels of Integration for Radar Applications

January 17, 2012
The newest digital processing techniques employed to reduce clutter, decrease the probability of false detection and increase the probability of accurate target detection are driving greater amounts of functionality and integration into the microwave and millimeter wave front ends.

Development of Multi-Layer Liquid Crystal Polymer Ka-band Receiver Modules

January 17, 2012
We present the development of a Ka-band receiver module using liquid crystal polymer (LCP) thin-film surface mount packages. We show the conversion gain measurement of the receiver and derive a chart that explains sources of loss in the module.

Development of Thin-Film Liquid-Crystal-Polymer Surface-Mount Packages for Ka-Band Applications

January 17, 2012
We present the design and development of thin-film liquid-crystal-polymer (LCP) surface-mount packages for -band applications.

A High-Performance 34 to 40 GHz Frequency Quadrupler Fabricated with Flip-Chip Technology

January 17, 2012
As part of an effort to reduce costs and simplify millimeterwave circuitry for mass production, an MLMS™ (MultiLithic MicroSystem™) technology has been applied to a multiplying LO (local oscillator) chain that had previously been implemented in MMIC (monolithic microwave integrated circuit) technology.

Flip-Chip Process Achieves Conversion Loss Under 8 dB in E-Band Diode Harmonic Mixers

January 17, 2012
The present work shows the results that can be achieved when these diodes are flip-attached onto low-loss passive integrated circuits to form E-band harmonic mixers.

Miniature Surface Mount Technology Diodes

January 17, 2012
Skyworks offers a variety of 0402 SMT diodes including PIN diodes for switch and attenuator applications, limiter diodes for receiver protection applications and more. These small form factor devices offer low parasitic inductance and low thermal impedance.

Skyworks: Limiter Diodes

January 17, 2012
Skyworks' broad product portfolio includes limiter diodes as package and bondable silicon chips, in addition to ceramic hermetic packaged and plastic surface mount packaged devices for receiver protetion applications.